Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs

Authors:
Guanghui Mei;Peicheng Li;Guangxi Hu;Ran Liu;Lingli Wang;Tingao Tang
Affiliations:
ASIC and System State Key Laboratory, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai 200433, PR China;ASIC and System State Key Laboratory, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai 200433, PR China;ASIC and System State Key Laboratory, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai 200433, PR China;ASIC and System State Key Laboratory, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai 200433, PR China;ASIC and System State Key Laboratory, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai 200433, PR China;ASIC and System State Key Laboratory, School of Information Science and Technology, Fudan University, 220 Handan Road, Shanghai 200433, PR China
Venue:
Microelectronics Journal
Year:
2012

Citing 4
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Abstract

In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (V"T"H) shift of the surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We show how V"T"H is influenced by QM effects with the considerations of (110)-silicon (Si) orientation and (100)-Si orientation. Both doped and undoped models are presented. The analytical results of the undoped model are compared with those obtained by Yu et al., and good agreement is observed. We show how V"T"H is influenced with the doping level. When the radius of an SG MOSFET is small (10^1^8cm^-^3), the V"T"H shift will be large.