An effective potential approach to modeling 25 nm MOSFET devices

Authors:
S. Ahmed;C. Ringhofer;D. Vasileska
Affiliations:
Department of Electrical and Computer Engineering, Southern Illinois University, Carbondale, USA 62901;Department of Mathematics, Arizona State University, Tempe, USA 85287;Department of Electrical Engineering, Arizona State University, Tempe, USA 85281
Venue:
Journal of Computational Electronics
Year:
2010

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Abstract

We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.