A novel current reference based on subthreshold MOSFETs with high PSRR

  • Authors:
  • Yu Guoyi;Zou Xuecheng

  • Affiliations:
  • Department of Electronic Science and Technology, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, PR China;Department of Electronic Science and Technology, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, PR China

  • Venue:
  • Microelectronics Journal
  • Year:
  • 2008

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Abstract

A novel current reference based on subthreshold MOSFETs with high power supply rejection ratio (PSRR) is presented. The proposed circuit takes full advantages of the I-V transconductance characteristics of MOSFET operating in the subthreshold region and the enhancement pre-regulator with the high gain negative feedback loop for the current reference core circuit. The proposed circuit, designed with the SMIC 0.18@mm standard CMOS logic process technology, exhibits a stable current of about 1.701@mA with much low temperature coefficient of 2.5x10^-^4@mA/^oC in the temperature range of -40 to 150^oC at 1.5V supply voltage, and also achieves a best PSRR over a broad frequency. The PSRR is about -126dB at dc frequency and remains -92dB at the frequency higher 1MHz. The proposed circuit operates stably at the supply voltage higher 1.2V and has good process compatibility.