Logic-based eDRAM: origins and rationale for use
IBM Journal of Research and Development - Electrochemical technology in microelectronics
ACM Transactions on Embedded Computing Systems (TECS)
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A logic-compatible low power eDRAM is demonstrated in 65nm CMOS achieving a retention time of 1.25msec and a static power dissipation of 91.3µW/Mb at 0.9V, 85ºC. A boosted 3T gain cell enhances data retention time and read speed. A regulated bit-line write scheme and a read reference bias generator mitigate write disturbance issues and improve tolerance to PVT variations.