Design solutions for sample-and-hold circuits in CMOS nanometer technologies

  • Authors:
  • Francesco Centurelli;Pietro Monsurrò;Salvatore Pennisi;Giuseppe Scotti;Alessandro Trifiletti

  • Affiliations:
  • Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza", Rome, Italy;Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza", Rome, Italy;Dipartimento di Ingegneria Elettrica Elettronica e dei Sistemi, Università di Catania, Catania, Italy;Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza", Rome, Italy;Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza", Rome, Italy

  • Venue:
  • IEEE Transactions on Circuits and Systems II: Express Briefs
  • Year:
  • 2009

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Abstract

Solutions for the design of low-voltage sample-and-hold (S/H) circuits in CMOS nanometer technologies are presented. As a design example, a 0.8-V supply S/H is designed and simulated using a 130-nm CMOS process. It dissipates 0.5 mW at dc and provides almost a rail-to-rail signal swing. When clocked at 40 MS/s and with a 1.4-VPP differential input signal, the simulated spurious-free dynamic range, signal-to-noise ratio, and total harmonic distortion are 57, 67, and -56 dB (9 equivalent bits), respectively, with low sensitivity to supply, temperature, process, and mismatch variations. The proposed solution employs a three-stage low-voltage amplifier without a tail current source in the differential pair and a switch topology, which combines clock voltage doubling and dummy switches.