Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices

Authors:
Takashi Nakamura;Eishi Yahagi;Hideaki Kameyama;Mamoru Baba
Affiliations:
-;-;-;-
Venue:
Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices
Year:
2008

Citing 0
Cited 2

A design-oriented soft error rate variation model accounting for both die-to-die and within-die variations in submicrometer CMOS SRAM cells

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Analytical soft error models accounting for die-to-die and within-die variations in sub-threshold SRAM cells

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

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Abstract

Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices. This book covers the relevant up-to-date topics in terrestrial neutron-induced soft errors, and aims to provide succinct knowledge on neutron-induced soft errors to the readers by presenting several valuable and unique features. Contents: Terrestrial Neutron Spectrometry and Dosimetry; Irradiation Testing in the Terrestrial Field; Neutron Irradiation Test Facilities; Review and Discussion of Experimental Data; Monte Carlo Simulation Methods; Simulation Results and Their Implications; International Standardization of the Neutron Test Method; Summary and Challenges.