Analysis of thermal behaviors of spin-torque-transfer RAM: a simulation study

Authors:
Subho Chatterjee;Sayeef Salahuddin;Satish Kumar;Saibal Mukhopadhyay
Affiliations:
Georgia Tech, Atlanta, USA;UC Berkeley, Berkeley, USA;Georgia Tech, Atlanta, USA;Georgia Tech, Atlanta, USA
Venue:
Proceedings of the 16th ACM/IEEE international symposium on Low power electronics and design
Year:
2010

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Abstract

We present an accurate model of the self-heating effect in the Spin-Torque-Transfer RAM (STTRAM) using finite-volume-methods and thermal RC based compact models. We couple device level thermal simulation to the self-heating phenomenon to show that self-heating during write operation can result in significant temperature increase in STTRAM which in turn adversely affect the read disturb, leakage energy and sensing accuracy.