Design of Analog CMOS Integrated Circuits
Design of Analog CMOS Integrated Circuits
IEEE Transactions on Circuits and Systems Part I: Regular Papers
A versatile time-domain approach to simulate oscillators in RF circuits
IEEE Transactions on Circuits and Systems Part I: Regular Papers
Radio Frequency Integrated Circuit Design
Radio Frequency Integrated Circuit Design
Wideband varactorless LC VCO using a tunable negative-inductance cell
IEEE Transactions on Circuits and Systems Part I: Regular Papers
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An X-band and two K a-band monolithic microwave integrated circuit (MMIC) common drain Colpitts oscillators using a parasitic cancellation technique are designed and fabricated in a 0.2-µm GaAs pHEMT technology with a fT of 60 GHz. The parasitic cancellation technique significantly improves the negative resistance and increases the maximum operatmg frequency, which is suitable for microwave and millimeter-wave applications. An in-depth theoretical analysis of the Miller effect and insights in the behavior of the input impedance with the parasitic cancellation are provided. The effect of the Q-factor of the inductor used in the cancellation, and the impact of the parasitic cancellation technique on phase noise and frequency tuning range are analyzed and discussed in detail. The X-band design has a measured phase noise of -117.5 dBc/Hz at 1 MHz offset with an output power of -9.3 dBm. The first K a-band design has a measured phase noise of -94 dBc/Hz at 1 MHz offset with an output power of +0.2 dBm. The second K a-band design providing more flexibility has a measured phase noise of -98.5 dBc/Hz at 1 MHz offset with an output power of +0.3 dBm. The two K a-band designs achieve very high fOSC / fT ratios and also demonstrate performance comparable to the best previously published oscillators in a similar frequency range.