Capturing intrinsic parameter fluctuations using the PSP compact model

Authors:
B. Cheng;D. Dideban;N. Moezi;C. Millar;G. Roy;X. Wang;S. Roy;A. Asenov
Affiliations:
University of Glasgow, Glasgow, U.K.;University of Glasgow, Glasgow, U.K.;University of Glasgow, Glasgow, U.K.;University of Glasgow, Glasgow, U.K.;University of Glasgow, Glasgow, U.K.;University of Glasgow, Glasgow, U.K.;University of Glasgow, Glasgow, U.K.;University of Glasgow, Glasgow, U.K.
Venue:
Proceedings of the Conference on Design, Automation and Test in Europe
Year:
2010

Citing 1
Cited 1

MOSFET modeling for 45nm and beyond

Proceedings of the 2007 IEEE/ACM international conference on Computer-aided design

Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study

Microelectronics Journal

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Abstract

Statistical variability (SV) presents increasing challenges to CMOS scaling and integration at nanometer scales. It is essential that SV information is accurately captured by compact models in order to facilitate reliable variability aware design. Using statistical compact model parameter extraction for the new industry standard compact model PSP, we investigate the accuracy of standard statistical parameter generation strategies in statistical circuit simulations. Results indicate that the typical use of uncorrelated normal distribution of the statistical compact model parameters may introduce considerable errors in the statistical circuit simulations.