Analog Integrated Circuits and Signal Processing - Special issue: low-voltage low-power analog integrated circuits
Parameter variations and impact on circuits and microarchitecture
Proceedings of the 40th annual Design Automation Conference
SOI Transistor Model for Fast Transient Simulation
Proceedings of the 2003 IEEE/ACM international conference on Computer-aided design
Efficient statistical modeling for circuit simulation
Design of system on a chip
Predictive technology model for nano-CMOS design exploration
ACM Journal on Emerging Technologies in Computing Systems (JETC)
Fast statistical circuit analysis with finite-point based transistor model
Proceedings of the conference on Design, automation and test in Europe
Capturing intrinsic parameter fluctuations using the PSP compact model
Proceedings of the Conference on Design, Automation and Test in Europe
| Hi-index | 0.00 |
Compact MOSFET models are a critical link between technology and design. The inexorable reduction in supply voltage and geometry to 45nm and below adds or emphasizes physical effects not important in the past, and so continues to expand the requirements for MOSFET models. At and below 45nm, process variations, reliability, proximity effects, high-k gate materials, and non-classical device structures all challenge modeling. This tutorial presents fundamentals and evolution of compact MOSFET models, and techniques to address the new challenges.