Modeling, Architecture, and Applications for Emerging Memory Technologies

  • Authors:
  • Yuan Xie

  • Affiliations:
  • Pennsylvania State University

  • Venue:
  • IEEE Design & Test
  • Year:
  • 2011

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Abstract

Editor's note:Spin-transfer torque RAM and phase-change RAM are vying to become the next-generation embedded memory, offering high speed, high density, and nonvolatility. This article discusses new opportunities and challenges presented by these two memory technologies with a particular emphasis on modeling and architecture design.—Chris H. Kim, University of Minnesota