Effect of Electromagnetic Interference (EMI) on the DC Shift, Harmonic and Intermodulation Performance of Diode-Connected NMOSFET

Authors:
Muhammad Taher Abuelma'Atti;Ali M. Abuelmaatti
Affiliations:
King Fahd University of Petroleum and Minerals, Dhahran, Saudi Arabia 31261;RFMD (UK) Ltd., Millennium Way, Heighington Lane Business Park, Newton Aycliffe, County Durham, UK DL5 6JW
Venue:
Analog Integrated Circuits and Signal Processing
Year:
2011

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Abstract

In this paper a new approximation is presented for the nonlinear relationship between the gate-to-source voltage and the current of a diode-connected NMOSFET. Using this expression closed-form expressions are obtained for the DC and the amplitudes of the fundamental, second- and third-harmonic and intermodulation components of the gate-to-source voltage resulting from exciting the diode-connected NMOSFET by a DC biasing current plus a superimposed multisinusoidal EMI. Comparison between calculated and simulated results is included.