Graphene nanoribbon crossbar nanomesh

Authors:
K. M. M. Habib;A. Khitun;A. A. Balandin;R. K. Lake
Affiliations:
Department of Electrical Engineering, University of California Riverside, 92506 U.S.A.;Department of Electrical Engineering, University of California Riverside, 92506 U.S.A.;Department of Electrical Engineering, University of California Riverside, 92506 U.S.A.;Department of Electrical Engineering, University of California Riverside, 92506 U.S.A.
Venue:
NANOARCH '11 Proceedings of the 2011 IEEE/ACM International Symposium on Nanoscale Architectures
Year:
2011

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Abstract

Graphene nanoribbon crossbars exhibit negative differential resistance. This nonlinear current-voltage response can be exploited in a nanomesh geometry for high-density logic or memory. A 2xN crossbar array can store 3N states. Proof-of-principle of a high functional density architecture exploiting the non-linear dynamics of graphene nanoribbon crossbars in a nanomesh geometry is demonstrated.