The Impact of Inductance on Transients Affecting Gate Oxide Reliability
VLSID '05 Proceedings of the 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design
Evaluating carbon nanotube global interconnects for chip multiprocessor applications
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Luttinger liquid theory as a model of the gigahertz electrical properties of carbon nanotubes
IEEE Transactions on Nanotechnology
Modeling Crosstalk Effects in CNT Bus Architectures
IEEE Transactions on Nanotechnology
Single-Conductor Transmission-Line Model of Multiwall Carbon Nanotubes
IEEE Transactions on Nanotechnology
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IEEE Transactions on Nanotechnology
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The work in this paper analyzes the crosstalk effects in Multi-wall Carbon Nanotube (MWCNT) based interconnect systems, and its impact on the reliability of the gate oxide of MOS devices. The electrical circuit parameters for interconnect are calculated using the existing models of MWCNT and the equivalent circuit has been developed to perform the crosstalk analysis. The crosstalk induced overshoot/undershoots have been estimated and the effect of the overshoot/undershoots on the gate oxide reliability is calculated in terms of failure-in-time (FIT) rate of the MOS devices. Single, double, and bundle of MWCNTs are considered for the analysis. The results are compared with that of traditional Cu based interconnects. It has been found that the average failure rate due to crosstalk overshoot/undershoots is ~10 to 100 times less in MWCNT based interconnect of length between 10 µm to 50 µm as compared to the copper based interconnects. Our analysis shows the applicability of MWCNTs in future VLSI circuits from the perspective of gate oxide reliability. The results also reveal that single or double MWCNT of large diameter is better than bundle of MWCNTs of smaller diameter.