Are carbon nanotubes the future of VLSI interconnections?
Proceedings of the 43rd annual Design Automation Conference
ACM Journal on Emerging Technologies in Computing Systems (JETC)
Low power FPGA design using hybrid CMOS-NEMS approach
ISLPED '07 Proceedings of the 2007 international symposium on Low power electronics and design
Performance and power evaluation of a 3D CMOS/nanomaterial reconfigurable architecture
Proceedings of the 2007 IEEE/ACM international conference on Computer-aided design
Electrical models for vertical carbon nanotube capacitors
Proceedings of the 18th ACM Great Lakes symposium on VLSI
Closed-form solution for timing analysis of process variations on SWCNT interconnect
Proceedings of the 11th international workshop on System level interconnect prediction
The Predictive Technology Model in the Late Silicon Era and Beyond
Foundations and Trends in Electronic Design Automation
Evaluating carbon nanotube global interconnects for chip multiprocessor applications
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Analysis of CNT bundle and its comparison with copper interconnect for CMOS and CNFET drivers
Journal of Nanomaterials
Inductance modelling of SWCNT bundle interconnects using partial element equivalent circuit method
Journal of Computational Electronics
Journal of Computational Electronics
Delay uncertainty in single- and multi-wall carbon nanotube interconnects
VDAT'12 Proceedings of the 16th international conference on Progress in VLSI Design and Test
Journal of Computational Electronics
Hi-index | 0.03 |
Semiconducting carbon nanotubes (CNTs) have gained immense popularity as possible successors to silicon as the channel material for ultrahigh-performance field-effect transistors (FETs). On the other hand, their metallic counterparts have often been regarded as ideal interconnects for future technology generations. Owing to their high current densities and increased reliability, metallic single-walled CNTs (SWCNTs) have been subjects of fundamental research, both in theory, as well as experiments. Metallic CNTs have been modeled for radio-frequency (RF) applications using a transmission-line model. In this paper, we present an efficient circuit-compatible RLC model for metallic SWCNTs, and analyze the impact of SWCNTs on the performance of ultrascaled digital very large scale integration (VLSI) design.