Statistical aging analysis with process variation consideration

Authors:
Sangwoo Han;Joohee Choung;Byung-Su Kim;Bong Hyun Lee;Hungbok Choi;Juho Kim
Affiliations:
Sogang University, Seoul, Rep. of Korea;Sogang University, Seoul, Rep. of Korea;Samsung Electronics Co. Ltd., Seoul, Rep. of Korea;Samsung Electronics Co. Ltd., Seoul, Rep. of Korea;Samsung Electronics Co. Ltd., Seoul, Rep. of Korea;Sogang University, Seoul, Rep. of Korea
Venue:
Proceedings of the International Conference on Computer-Aided Design
Year:
2011

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Abstract

As CMOS devices become smaller, process and aging variations become a major issue for circuit reliability and yield. In this paper, we analyze the effects of process variations on aging effects such as hot carrier injection (HCI) and negative bias temperature instability (NBTI). Using Monte-Carlo based transistor-level simulations including principal component analysis (PCA), the correlations between process variations and aging variations are considered. The accuracy of analysis is improved (2-7%) compared to other methods in which the correlations are ignored, especially in smaller technologies.