Fast and Compact Error Correcting Scheme for Reliable Multilevel Flash Memories
IOLTW '02 Proceedings of the Proceedings of The Eighth IEEE International On-Line Testing Workshop (IOLTW'02)
Error Correcting Strategy for High Speed and High Density Reliable Flash Memories
Journal of Electronic Testing: Theory and Applications
Error Control Coding, Second Edition
Error Control Coding, Second Edition
Error Correction Codes for Non-Volatile Memories
Error Correction Codes for Non-Volatile Memories
Storage architecture and software support for SLC/MLC combined flash memory
Proceedings of the 2009 ACM symposium on Applied Computing
DFT '09 Proceedings of the 2009 24th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems
Codes for asymmetric limited-magnitude errors with application to multilevel flash memories
IEEE Transactions on Information Theory
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Flash memories have found extensive application for use in storage devices. The storage capacity and reliability of these devices have increased enormously over the years. With increase in density of data storage, the raw bit error rate (RBER), associated with the storage device increases. Error control coding (ECC) can be used to reduce the RBER to acceptable values so that these devices can be employed to store information in applications where data corruption is unacceptable. In this paper, we describe the synthesis of BCH codes for flash memories based on multi level cell (MLC) concept. This is in continuation of our work on synthesis of BCH codes for improving the performance of flash memories based on single level cells (SLC). The improvement in device integrity resulting from the use of these codes has been quantified in this paper along with computation of parameters which allows modelling of flash memory as an equivalent channel. While synthesising codes, we have adhered to the limitations imposed by the memory architecture. Use of these codes in storage devices will result in considerable enhancement of device reliability and consequently open up many new applications for this class of storage devices.