New memory organizations for 3d DRAM and PCMs

  • Authors:
  • Ademola Fawibe;Jared Sherman;Krishna Kavi;Mike Ignatowski;David Mayhew

  • Affiliations:
  • University of North Texas;University of North Texas;University of North Texas;Advanced Micro Devices;Advanced Micro Devices

  • Venue:
  • ARCS'12 Proceedings of the 25th international conference on Architecture of Computing Systems
  • Year:
  • 2012

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Abstract

The memory wall (the gap between processing and storage speeds) remains a concern to computer systems designers. Caches have played a key role in hiding the performance gap by keeping recently accessed information in fast memories closer to the processor. Multi and many core systems are placing severe demands on caches, exacerbating the performance disparity between memory and processors. New memory technologies including 3D stacked DRAMs, solid state disks (SSDs) such as those built using flash technologies and phase change memories (PCM) may alleviate the problem: 3D DRAMs and SSDs present lower latencies than conventional, off-chip DRAMs and magnetic disk drives. However these technologies force us to rethink how address spaces should be organized into pages and how virtual addresses should be translated into physical pages. In this paper, we present some preliminary ideas in this connection, and evaluate these new organizations using SPEC CPU2006 benchmarks.