Structures and electrical properties of Ag-tetracyanoquinodimethane organometallic nanowires

  • Authors:
  • Zhiyong Fan;Xiaoliang Mo;Chengfei Lou;Yan Yao;Dawei Wang;Guorong Chen;J. G. Lu

  • Affiliations:
  • Dept. of Chem. Eng. & Mater. Sci., Univ. of California, Irvine, CA, USA;-;-;-;-;-;-

  • Venue:
  • IEEE Transactions on Nanotechnology
  • Year:
  • 2005

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Abstract

Ag-tetracyanoquinodimethane (Ag-TCNQ) nanostructures are synthesized using both solution reaction in acetonitrile and a novel vacuum-saturated vapor reaction method. Experiments show that the latter synthesis method produces Ag-TCNQ nanowires with better uniformity and higher aspect ratio. These nanowires, having diameters around 100 nm and lengths about 5 μm, could serve as potential building blocks of nanoscale electronics. Nanodevices based on these nanowires are fabricated using the electron-beam lithography technique. Electrical transport study shows reproducible I--V hysteresis with a change in resistance of four orders of magnitude, demonstrating electrical memory effect. This electrical bistability makes Ag-TCNQ nanowires a promising candidate for future applications in ultrahigh-density information storage.