Analysis of modeling approaches for on-chip spiral inductors

Authors:
Huang Wang;Lingling Sun;Jun Liu;Zhiping Yu;Jianjun Gao
Affiliations:
Department of Communication Engineering, School of Information Science and Technology, East China Normal University, Shanghai 200241, China and Key Laboratory of RF Circuits and Systems of Ministr ...;Key Laboratory of RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China;Key Laboratory of RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China;Key Laboratory of RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China;Department of Communication Engineering, School of Information Science and Technology, East China Normal University, Shanghai 200241, China
Venue:
International Journal of RF and Microwave Computer-Aided Engineering
Year:
2012

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Abstract

The recent modeling approaches for on-chip spiral inductors are extensively investigated and compared. The key features of the models are detailedly analyzed. By actual implementation of each model's parameter extraction procedure, the pros and cons of equivalent circuit topologies, parameter extraction techniques, and fitting capacity of models are provided, including 1-π, 2-π, and T-models. 1-π models and T-models are proved to be adequate for modeling distributed effect. 2-π models are more convenient in fitting asymmetric inductors. The transfer function of the spiral inductor is employed in the singularity analysis of the models. The proposals are verified by measured the S-parameters of 10 fabricated CMOS spiral inductors up to 40 GHz. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012. © 2012 Wiley Periodicals, Inc.