A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients

Authors:
Zhichao Zhang;Yi Ren;Li Chen;Nelson J. Gaspard;Arthur. F. Witulski;Timothy W. Holman;Bharat L. Bhuva;Shi-Jie Wen;Ramaswami Sammynaiken
Affiliations:
Department Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, Canada;Department Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, Canada;Department Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, Canada;Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, USA;Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, USA;Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, USA;Electrical Engineering and Computer Science Department, Vanderbilt University, Nashville, USA;Cisco Inc., San Jose, USA;Saskatchewan Structural Science Centre, University of Saskatchewan, Saskatoon, Canada
Venue:
Journal of Electronic Testing: Theory and Applications
Year:
2013

Citing 2
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Abstract

A novel built-in voltage sensor circuit has been developed in 90-nm CMOS technology to characterize temporal and physical locations of ion hits. The sensing circuit only has 8 transistors, with very small area and power overhead. Simulations and laser experimental results illustrate the effectiveness of the sensing circuit. The sensors can be implemented in grid formation to systematically detect the ion hits in real time.