High frequency flipped voltage follower with improved performance and its application

Authors:
Urvashi Singh;Maneesha Gupta
Affiliations:
-;-
Venue:
Microelectronics Journal
Year:
2013

Citing 7
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Abstract

In this paper a wideband flipped voltage follower (FVF) with low output impedance at high frequency has been proposed. Inductive-peaking-based bandwidth extension technique is employed in the FVF cell. The small signal high-frequency analysis of both conventional and proposed FVF has been done. It is shown in analytical derivation of the proposed FVF that by adding an inductive element in the feedback path, the bandwidth is enhanced. Simulation results show that bandwidth extension ratio (BWER) of proposed FVF is about 2.00, without extra dc power dissipation. A wideband low voltage current mirror has been developed by using proposed FVF in place of conventional FVF and by doing so, BWER of 2.98 has been achieved. The performances of circuits are verified in TSMC 0.18@mm CMOS, BSIM3 and Level 49 technology with 1.5V power supply and by using Spectre simulator of Cadence.