Physical insight into fractional power dependence of saturation current on gate voltage in advanced short channel MOSFETS (alpha-power law model)

Authors:
Hyunsik Im
Affiliations:
University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo, Japan and Dongguk University, 3-26 Phil-Dong, Joong-Gu, Seoul, Korea
Venue:
Proceedings of the 2002 international symposium on Low power electronics and design
Year:
2002

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Abstract

The physical origin of the fractional power dependence of MOSFET drain current on gate voltage, namely &agr;-power law model that has been considered as a fully empirical model, is analytically investigated. For this purpose, we have developed a new physics-based analytical drain current model. Using this model, we prove that the saturation current can be simplified in the form of Bċ(Vg-VTH)&agr;, &agr;-power law model. The physical interpretations on &agr;, B, VTH are elucidated, and their analytical expressions are given in terms of MOSFET's parameters. Since the a-power model is compact and physics-based, it allows circuit designers to easily estimate the power dissipation and the gate delay time in a predictable manner.