A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level
Proceedings of the IEEE International Test Conference on Driving Down the Cost of Test
CMOS IC reliability indicators and burn-in economics
ITC '98 Proceedings of the 1998 IEEE International Test Conference
Scan test planning for power reduction
Proceedings of the 44th annual Design Automation Conference
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The gate oxide of complementary metal-oxide semiconductor (CMOS) transistors is critical. Penalties for poor-quality oxides can be severe, impacting test escape, burn-in, and field failure costs. Twenty years ago, oxide thicknesses were about 750 \AA. Now they are 40 \AA, and reductions continue. Gate oxide electric-field intensity is presently higher than burn-in electric-field intensities of 10 years ago. This article discusses the major gate oxide failure modes, reliability modeling, burn-in, and qualification testing. We present a typical method to calculate failure rates.