Application of soft landing to the process control of chemical mechanical polishing

Authors:
Jian-Bin Chiu;Cheng-Ching Yu;Shih-Haur Shen
Affiliations:
Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106-07, Taiwan;Department of Chemical Engineering, National Taiwan University, Taipei 106-17, Taiwan;Applied Materials Taiwan Ltd., Hsin-Chu 300, Taiwan
Venue:
Microelectronic Engineering
Year:
2003

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Abstract

In chemical mechanical polishing (CMP), a two-stage polishing strategy is often employed. A high removal rate (RR) is set at the initial stage, then a lower RR is employed to remove residual metal and extended to the over-polish stage. An analogy between the soft landing of a spacecraft and CMP operation is established and the CMP operation can be viewed as a minimum-time optimal control problem. Measurement uncertainties prevent direct implementation of bang-bang control law for the entire polishing process. Thus, a two-stage CMP operation procedure is devised to ensure robust operation while maintaining a high throughput.