Dependency of dishing on polish time and slurry chemistry in Cu CMP
Proceedings of the third Europeon workshop on Materials for advanced metallization
Robust operation of copper chemical mechanical polishing
Microelectronic Engineering
Application of soft landing to the process control of chemical mechanical polishing
Microelectronic Engineering
Chemical mechanical planarization operation via dynamic programming
Microelectronic Engineering
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The development of chemical-mechanical planarization (CMP) to date relies on multi-stage polishing for better performance. The straight relationship between performance and operation provides a new method of control for CMP process. The strategy of dynamic tuning is proposed in this paper and one possible operation profile is established via sliding-mode theory. Because of the lack of operation mechanism of the equipment in existence, more elaborate experimental verification of the strategy is yet to follow. We may need to work with some equipment suppliers. Based on the proposed strategy, lower dishing and more efficient copper step height reduction can be verified from some numerical simulations. Simulation results show better performance under the same throughput.