Merged Dram-Logic In The Year 2001

  • Authors:
  • P. W. Diodato;Y.-H. Wong;C.-T Liu;K.-H. Lee;R. Dail;W. S. Lindenberger;A. C.. .. Dumbri;M. V. Depaolis;J. T. Clemens;W. W. Troutman;K. Noda;J. M. Drynan;M. Nakamae

  • Affiliations:
  • -;-;-;-;-;-;-;-;-;-;-;-;-

  • Venue:
  • MTDT '98 Proceedings of the 1998 IEEE International Workshop on Memory Technology, Design and Testing
  • Year:
  • 1998

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Abstract

The desire to enhance memory bandwidth in high-performance computing components is overwhelming, and early attempts to combine large memories with high-performance logic in a single silicon integrated circuit are numerous. However existing implementations of a combined (merged) memory-logic technology are unsatisfactory (because of high cost) and complicated (because the technologies used for high-performance logic and high-density memory are disparate). The research reported here will explain the joint technology development of two corporations working on a merged memory-logic technology in terms of:1) memory cell design comparisons 2) transistor and capacitor specifications, 3) process technology tradeoffs, and 4) circuit simulations.