A fault model for switch-level simulation of gate-to-drain shorts

  • Authors:
  • P. Dahlgren;P. Liden

  • Affiliations:
  • -;-

  • Venue:
  • VTS '96 Proceedings of the 14th IEEE VLSI Test Symposium
  • Year:
  • 1996

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Abstract

An efficient algorithm for analyzing a subset of transistor-level bridging faults is proposed. The complex analogue behavior of gate-to-drain shorts is handled using a network primitive into which the fault injected transistor is mapped. The resistances of the surrounding subnetworks obtained from a linear switch-level model are used together with a simple iteration scheme to predict the voltage at the shortened nodes. Fault simulation experiments were conducted and the algorithm shows good agreement with electrical-level analysis.