Extreme-Voltage Stress Vector Generation of Analog CMOS ICs for Gate-Oxide Reliability Enhancement

  • Authors:
  • Mohammad Athar Khalil;Chin-Long Wey

  • Affiliations:
  • -;-

  • Venue:
  • ITC '01 Proceedings of the 2001 IEEE International Test Conference
  • Year:
  • 2001

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Abstract

Extreme-voltage screening has been successfullyimplemented to enhance gate-oxide reliability of digitalCMOS ICs. However, the success has not yet beenextended to its analog counterparts. As a result, almost allthe manufacturers employ the digital circuit screeningprocess for the analog modules in mixed-signal CMOSICs. Our pervious study had addressed the issues on howto properly stress analog circuits to enhance the gate-oxidereliability of mixed-signal CMOS integratedcircuits, and the trade-off between the stress coverage andstress time. This paper presents two algorithms thatgenerate a set of stress vectors for an analog circuit (1) tomeet the stress coverage requirement and to result in aminimum stress time; and (2) to meet the stress timerequirement and to result in a maximum stress coverage.