Impact of Interconnect Pattern Density Information on a 90nm Technology ASIC Design Flow

  • Authors:
  • Payman Zarkesh-Ha;S. Lakshminarayann;Ken Doniger;William Loh;Peter Wright

  • Affiliations:
  • -;-;-;-;-

  • Venue:
  • ISQED '03 Proceedings of the 4th International Symposium on Quality Electronic Design
  • Year:
  • 2003

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Abstract

The importance of an interconnect pattern densitymodel in ASIC design flow for a 90nm technology ispresented. It is shown that performing the timing analysisat the worst-case corner model for interconnect variation,without the knowledge of interconnect pattern density,often results in overdesign. Our experiments on real ASICproducts indicate that knowledge of interconnect patterndensity in timing analysis of 90nm ASIC design flowprevents such overdesign. Quantitatively, it is shown thatconsidering only the worst-case corner model in a globalnet results in a 10% delay overdesign. To meet the targetdelay for the net, it is sufficient to use a 45% smaller gate,which results in a 32% reduction in gate powerdissipation, as well. It is, therefore, imperative to takeinto account the interconnect pattern density informationin ASIC design flow of 90nm and future technologies.