ISLPED '98 Proceedings of the 1998 international symposium on Low power electronics and design
Scaling of stack effect and its application for leakage reduction
ISLPED '01 Proceedings of the 2001 international symposium on Low power electronics and design
Circuit-level techniques to control gate leakage for sub-100nm CMOS
Proceedings of the 2002 international symposium on Low power electronics and design
Approaches to run-time and standby mode leakage reduction in global buses
Proceedings of the 2004 international symposium on Low power electronics and design
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This paper proposes new SOI circuit strategies for simultaneous reduction of standby gate and sub-threshold leakages. Various enhanced MTCMOS design alternatives are analyzed. A new method for assigning the VTH and sizes of header and footer transistors is proposed, and stacking of headers/footers is analyzed. The optimum stacking height and tapering/sizing ratio under various design constraints are determined. Our strategies reduce MTCMOS standby leakage further by as much as 20X and reduce virtual supply noise by 15%.