Modeling of Ballistic Carbon Nanotube Field Effect Transistors for Efficient Circuit Simulation

Authors:
Arijit Raychowdhury;Saibal Mukhopadhyay;Kaushik Roy
Affiliations:
Purdue University;Purdue University;Purdue University
Venue:
Proceedings of the 2003 IEEE/ACM international conference on Computer-aided design
Year:
2003

Citing 1
Cited 2

Single-walled carbon nanotube electronics

IEEE Transactions on Nanotechnology

Nanometer scale technologies: device considerations

Nano, quantum and molecular computing
Nanocomputing in the presence of defects and faults: a survey

Nano, quantum and molecular computing

Quantified Score

Hi-index	0.00

Visualization

Abstract

Carbon Nanotube Field-Effect Transistors (CNFETs) arebeing extensively studied as possible successors to CMOS.Novel device structures have been fabricated and devicesimulators have been developed to estimate theirperformance in a sub 10nm transistor era. This paperpresents a novel method of circuit-compatible modeling ofCNFETs in their ultimate performance limit. The model sodeveloped has been used to simulate arithmetic and logicblocks using HSPICE.