Scaling of MOS technology to submicrometer feature sizes
Analog Integrated Circuits and Signal Processing - Joint special issue on analog VLSI computation
Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
Technology and design challenges for low power and high performance
ISLPED '99 Proceedings of the 1999 international symposium on Low power electronics and design
Life is CMOS: why chase the life after?
Proceedings of the 39th annual Design Automation Conference
Circuit-level techniques to control gate leakage for sub-100nm CMOS
Proceedings of the 2002 international symposium on Low power electronics and design
Intrinsic Leakage in Low-Power Deep Submicron CMOS ICs
Proceedings of the IEEE International Test Conference
Parameter variations and impact on circuits and microarchitecture
Proceedings of the 40th annual Design Automation Conference
Proceedings of the 2003 international symposium on Low power electronics and design
Gate leakage reduction for scaled devices using transistor stacking
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IEEE Transactions on Very Large Scale Integration (VLSI) Systems - Special section on low power
Modeling of Ballistic Carbon Nanotube Field Effect Transistors for Efficient Circuit Simulation
Proceedings of the 2003 IEEE/ACM international conference on Computer-aided design
Luttinger liquid theory as a model of the gigahertz electrical properties of carbon nanotubes
IEEE Transactions on Nanotechnology
An RF circuit model for carbon nanotubes
IEEE Transactions on Nanotechnology
Design methodology for Carbon Nanotube based circuits in the presence of metallic tubes
Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale Architectures
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This chapter discusses the problems and challenges in scaling Silicon transistors in the nanotechnology era. The principle bottle necks to the scaling of Silicon devices have been discussed. In the latter half of this chapter, novel devices, particularly carbon nanotubes, have been introduced as possible alternatives to Silicon. The material properties, principal device characteristics and circuit issues relating to these revolutionary devices have been discussed.