Modeling and estimation of total leakage current in nano-scaled CMOS devices considering the effect of parameter variation

Authors:
Saibal Mukhopadhyay;Kaushik Roy
Affiliations:
Purdue University, West Lafayette, IN;Purdue University, West Lafayette, IN
Venue:
Proceedings of the 2003 international symposium on Low power electronics and design
Year:
2003

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Abstract

In this paper we have developed analytical models to estimate the mean and the standard deviation in the gate, the subthreshold, the reverse biased source/drain junction band-to-band-tunneling (BTBT) and the total leakage in scaled CMOS devices considering variation in process parameters like device geometry, doping profile, flat-band voltage and supply voltage. We have verified the model using Monte Carlo simulation using an NMOS device of 50nm effective length and analyzed the results to enumerate the effect of different process parameters on the individual components and the total leakage.