Introduction to algorithms
Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
Proceedings of the 40th annual Design Automation Conference
Design of Deep Sub-Micron CMOS Circuits
VLSID '03 Proceedings of the 16th International Conference on VLSI Design
Proceedings of the 2003 international symposium on Low power electronics and design
Gate leakage reduction for scaled devices using transistor stacking
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Models and algorithms for bounds on leakage in CMOS circuits
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Proceedings of the 44th annual Design Automation Conference
On Composite Leakage Current Maximization
Journal of Electronic Testing: Theory and Applications
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In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-to-band-tunneling (BTBT) leakage, results in the large increase of total leakage power in a logic circuit. Leakage components interact with each other in device level (through device geometry, doping profile) and also in the circuit level (through node voltages). Due to the circuit level interaction of the different leakage components, the leakage of a logic gate strongly depends on the circuit topology i.e. number and nature of the other logic gates connected to its input and output. In this paper, for the first time, we have analyzed loading effect on leakage and proposed a method to accurately estimate the total leakage in a logic circuit, from its logic level description considering the impact of loading and transistor stacking.