Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
Leakage control with efficient use of transistor stacks in single threshold CMOS
Proceedings of the 36th annual ACM/IEEE Design Automation Conference
Circuit-level techniques to control gate leakage for sub-100nm CMOS
Proceedings of the 2002 international symposium on Low power electronics and design
IDDQ Testing for Deep-Submicron ICs: Challenges and Solutions
IEEE Design & Test
Selective gate-length biasing for cost-effective runtime leakage control
Proceedings of the 41st annual Design Automation Conference
Modeling and Analysis of Loading Effect in Leakage of Nano-Scaled Bulk-CMOS Logic Circuits
Proceedings of the conference on Design, Automation and Test in Europe - Volume 1
Simultaneous Reduction of Dynamic and Static Power in Scan Structures
Proceedings of the conference on Design, Automation and Test in Europe - Volume 2
ISQED '05 Proceedings of the 6th International Symposium on Quality of Electronic Design
ASP-DAC '06 Proceedings of the 2006 Asia and South Pacific Design Automation Conference
Simultaneous Fine-grain Sleep Transistor Placement and Sizing for Leakage Optimization
ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
ICCAD '05 Proceedings of the 2005 IEEE/ACM International conference on Computer-aided design
Nanometer scale technologies: device considerations
Nano, quantum and molecular computing
Low-power design techniques for scaled technologies
Integration, the VLSI Journal - Special issue: Low-power design techniques
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Two-phase fine-grain sleep transistor insertion technique in leakage critical circuits
Proceedings of the 2006 international symposium on Low power electronics and design
Modeling and analysis of leakage induced damping effect in low voltage LSIs
Proceedings of the 2006 international symposium on Low power electronics and design
Leakage power dependent temperature estimation to predict thermal runaway in FinFET circuits
Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design
Digital Circuit Optimization via Geometric Programming
Operations Research
UDSM subthreshold leakage model for NMOS transistor stacks
Microelectronics Journal
Two-phase fine-grain sleep transistor insertion technique in leakage critical circuits
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
An efficient segmental bus-invert coding method for instruction memory data bus switching reduction
EURASIP Journal on Embedded Systems
Low-power design techniques for scaled technologies
Integration, the VLSI Journal - Special issue: Low-power design techniques
Gated Decap: gate leakage control of on-chip decoupling capacitors in scaled technologies
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Floorplanning for low power IC design considering temperature variations
Microelectronics Journal
Modeling, analysis, and application of leakage induced damping effect for power supply integrity
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Testing for SoCs with advanced static and dynamic power-management capabilities
Proceedings of the Conference on Design, Automation and Test in Europe
Analysis and design of on-chip decoupling capacitors
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
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In this paper, the effect of gate tunneling current in ultra-thin gate oxide MOS devices of effective length (Leff) of 25 nm ( oxide thickness = 1.1 nm), 50 nm ( oxide thickness = 1.5 nm) and 90 nm( oxide thickness = 2.5 nm) is studied using device simulation. Overall leakage in a stack of transistors is modeled and the opportunities for leakage reduction in the standby mode of operation are explored for scaled technologies. It is shown that, as the contribution of gate leakage relative to the total leakage increases with technology scaling, traditional techniques become ineffective in reducing overall leakage current in a circuit. A novel technique of input vector selection based on the relative contributions of gate and subthreshold leakage to the overall leakage is proposed for reducing total leakage in a circuit. This technique results in 44% savings in total leakage in 50-nm devices compared to the conventional stacking technique.