IDDQ Testing for Deep-Submicron ICs: Challenges and Solutions

  • Authors:
  • Zhanping Chen;Liqiong Wei;Ali Keshavarzi;Kaushik Roy

  • Affiliations:
  • -;-;-;-

  • Venue:
  • IEEE Design & Test
  • Year:
  • 2002

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Abstract

The use of low-threshold devices in scaled low-voltage CMOS circuits leads to increased intrinsic leakage current. As a result, IDDQ testing requires different techniques to remain effective.