Multiple-Parameter CMOS IC Testing with Increased Sensitivity for IDDQ

  • Authors:
  • Ali Keshavarzi;Kaushik Roy;Manoj Sachdev;Charles F. Hawkins;K. Soumyanath;Vivek De

  • Affiliations:
  • -;-;-;-;-;-

  • Venue:
  • ITC '00 Proceedings of the 2000 IEEE International Test Conference
  • Year:
  • 2000

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Abstract

Technology scaling challenges the effectiveness of currentbasedtest techniques such as IDDQ. Furthermore, existingleakage reduction techniques are not as effective inaggressively scaled technologies. We exploited intrinsicdependencies of transistor and circuit leakage on clockfrequency, temperature, and reverse body bias (RBB) todiscriminate fast ICs from defective ones. Transistor andcircuit parameters were measured and correlated todemonstrate leakage-based testing solutions with improvedsensitivity. We used a test IC with available body terminalsfor our experimental measurements. Our data suggestadopting a sensitive multiple-parameter test solution. Forhigh performance IC applications, we propose a new testtechnique, IDDQ versus FMAX (maximum operatingfrequency), in conjunction with using temperature (orRBB) to improve the defect detection sensitivity. For costsensitive applications, IDDQ versus temperature test can bedeployed. Our data show that temperature (cooling from110 oC to room) improved sensitivity of IDDQ versus FMAXtwo-parameter test by more than an order of magnitude(13.8X). The sensitivity can also be tuned by properselection of a temperature range to match a required DPMlevel.