Defect detection with transient current testing and its potential for deep sub-micron CMOS ICs

  • Authors:
  • Manoj Sachdev;Peter Janssen;Victor Zieren

  • Affiliations:
  • -;-;-

  • Venue:
  • ITC '98 Proceedings of the 1998 IEEE International Test Conference
  • Year:
  • 1998

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Abstract

Transient current testing (IDDT) has been often cited as analternative and/or supplement to IDDQ testing. In this articlewe investigate the potential of transient current testingin faulty chip detection with silicon devices. The effectivenessof the IDDT test method is compared with IDDQ aswell as with SA-based voltage testing. Photon emissionmicroscopy is used to localize defects in several faulty devices.Furthermore, the potential of IDDT testing for leakydeep sub-micron devices is investigated.