Transient Current Testing of 0.25 µm CMOS Devices

Authors:
Bram Kruseman;Peter Janssen;Victor Zieren
Affiliations:
-;-;-
Venue:
ITC '99 Proceedings of the 1999 IEEE International Test Conference
Year:
1999

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Abstract

Transient current testing (IDDT) has been often cited as analternative and/or supplement to IDDQ testing. The effectivenessof our IDDT test method is compared with IDDQ aswell as with SA-based voltage testing for devices producedin 0.25 µm technology. For these devices a large vector-to-vectorspread in IDDT is observed. This spread is investigatedtogether with the die-to-die spread to determine apass/fail criterion. The vector-to-vector spread is compensatedby comparing the measured IDDT values with thoseof a known good (golden) device. A hardware solution foran IDDT monitor is presented which includes a correctionfor the golden device signature. Therefore real-time IDDTtesting on a digital tester without data-processing becomesfeasible.