Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
Modeling and analysis of leakage power considering within-die process variations
Proceedings of the 2002 international symposium on Low power electronics and design
Proceedings of the 40th annual Design Automation Conference
Design for Variability in DSM Technologies
ISQED '00 Proceedings of the 1st International Symposium on Quality of Electronic Design
Proceedings of the 2003 international symposium on Low power electronics and design
Statistical design of the 6T SRAM bit cell
IEEE Transactions on Circuits and Systems Part I: Regular Papers
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In this paper, a novel device optimization methodology is presented that is constrained by the total leakage and the ON current of the device. The devised technique locates a maximum yield rectangular cube in a three-dimensional feasible space composed by oxide thickness, halo peak doping, and halo characteristic length parameters. The center of this cube is considered as the maximum yield design point with the highest immunity against variations. Monte-Carlo simulations show that the optimized Bulk-MOS device for 45 nm gate length satisfies the on current and leakage constraints under a variability of up to 30% in the three parameters.