Analysis and modeling of subthreshold leakage of RT-components under PTV and state variation

  • Authors:
  • Domenik Helms;Günter Ehmen;Wolfgang Nebel

  • Affiliations:
  • OFFIS Research Institute, Oldenburg, Germany;OFFIS Research Institute, Oldenburg, Germany;University of Oldenburg, Oldenburg, Germany

  • Venue:
  • Proceedings of the 2006 international symposium on Low power electronics and design
  • Year:
  • 2006

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Abstract

In this work we present a SPICE-based RTL subthreshold-leakage model analyzing components built in 70nm technology [1]. We present a separation approach regarding inter- and intra-die threshold variations, temperature, supply-voltage, and state dependence. The body-effect and differences between NMOS and PMOS introduce a leakage state dependence of one order of magnitude[2, 3]. We show that the leakage of RT-components still shows state dependencies between 20% and $80%. A leakage model not regarding the state can never be more accurate than this. The proposed state aware model has an average error of 6.7% for the RT-components analyzed.