Resistive Power in CMOS Circuits

Authors:
Magdy A. El-Moursy;Eby G. Friedman
Affiliations:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627-0231. maelmou@ece.rochester.edu;Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627-0231
Venue:
Analog Integrated Circuits and Signal Processing
Year:
2004

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Abstract

Interconnect resistance dissipates a portion of the total transient power in CMOS circuits. Conduction losses increase with larger interconnect resistance. It is shown in this paper that these losses do not add to the total power dissipation of a CMOS circuit through I2R losses. Interconnect resistance can, however, increase the short-circuit power of both the driver and load gates.