Total leakage power optimization with improved mixed gates
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We present a new method for assignment of devices with different V_th in a double-V_th-process, whereas leakage is reduced and performance increases or is constant. A mixed-V_th gate type is developed, which renders new masks unnecessary. As compared with known methods, our approach achieves an additional leakage reduction of 25% while leakage reduction in raw designs is average 65%.