Simulating and Improving Microelectronic Device Reliability by Scaling Voltage and Temperature

Authors:
Xiaojun Li;Joerg D. Walter;Joseph B. Bernstein
Affiliations:
University of Maryland, College Park, MD;University of Maryland, College Park, MD;University of Maryland, College Park, MD
Venue:
ISQED '05 Proceedings of the 6th International Symposium on Quality of Electronic Design
Year:
2005

Citing 3
Cited 0

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Abstract

The purpose of this work is to explore how device operation parameters such as switching speed and power dissipation scale with voltage and temperature. We simulated a CMOS ring oscillator under different stress conditions to determine the accurate scaling relations of these operating parameters. Reduced voltage, frequency and temperature applied to a device will reduce its internal stresses, leading to an improvement of device reliability. Since all these variations for a single device are proportional, the ratios can be applied to a full circuit and help to simplify the derating model and formulate practical design guidelines for system developers to derate devices for long life applications.