The Challenges and Impact of Parasitic Extraction at 65 nm

  • Authors:
  • Karen Chow

  • Affiliations:
  • Mentor Graphics

  • Venue:
  • ISQED '06 Proceedings of the 7th International Symposium on Quality Electronic Design
  • Year:
  • 2006

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Abstract

Although industry-wide adoption of 65nm technology is in its infancy, major foundries have started developing design kits for the 65nm base. For designers, this means managing new and complex process variability and interconnect issues, relevant to specific design flows, using advanced parasitic extraction methodologies.