The circuit design of the synergistic processor element of a CELL processor

  • Authors:
  • O. Takahashi;R. Cook;S. Cottier;S. H. Dhong;B. Flachs;K. Hirairi;A. Kawasumi;H. Murakami;H. Noro;H. Oh;S. Onish;J. Pille;J. Silberman

  • Affiliations:
  • IBM Syst. & Technol. Group, Austin, TX, USA;IBM Syst. & Technol. Group, Austin, TX, USA;IBM Syst. & Technol. Group, Austin, TX, USA;IBM Syst. & Technol. Group, Austin, TX, USA;IBM Syst. & Technol. Group, Austin, TX, USA;-;-;-;-;-;-;-;-

  • Venue:
  • ICCAD '05 Proceedings of the 2005 IEEE/ACM International conference on Computer-aided design
  • Year:
  • 2005

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Abstract

A 32b 4-way SIMD dual-issue synergistic processor element of a CELL processor is developed with 20.9 million transistors in 14.8mm/sup 2/ using a 90nm SOI technology. CMOS static gates implement the majority of the logic. Dynamic circuits are used in critical areas, occupying 19% of the nonSRAM area. ISA, microarchitecture and physical implementation are tightly coupled to achieve a compact and power efficient design. Correct operation has been observed up to 5.6GHz at 1.4V supply and 56/spl deg/C.