An analysis of high-frequency noise in RF active CMOS mixers

Authors:
Payam Heydari
Affiliations:
Department of EECS, University of California, Irvine 92697-2625
Venue:
Analog Integrated Circuits and Signal Processing
Year:
2006

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Abstract

An analysis of high-frequency noise in RF active CMOS mixers including single-balanced and double-balanced architectures is presented. The analysis investigates the contribution of non-white gate-induced noise to the output noise power as well as the spot noise figure (NF) of the RF CMOS mixer. It accounts for the non-zero correlation between the gate-induced noise and the channel's thermal noise. The noise contribution of the RF transconductor and the switching pair to the output noise power is studied. Experimental results verify the accuracy of the analytical model.