Factors That Impact the Critical Charge of Memory Elements

Authors:
Tino Heijmen;Damien Giot;Philippe Roche
Affiliations:
Philips Research Laboratories (WAY41), The Netherlands;ST Microelectronics, France;ST Microelectronics, France
Venue:
IOLTS '06 Proceedings of the 12th IEEE International Symposium on On-Line Testing
Year:
2006

Citing 0
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Analytical soft error models accounting for die-to-die and within-die variations in sub-threshold SRAM cells

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Abstract

Like other silicon integrated circuit (IC) domains, the smart card market is very competitive and main actors are constantly trying to design the cheapest and safest circuits to ensure their consumers' satisfaction. These specificities lead smart cards ...