Semiconductor Material and Device Characterization

Characterization of (Ba,Sr)TiO3 thin-film capacitors with Ir bottom electrodes and its improvement by plasma treatment

Microelectronic Engineering

The RF-CV method for characterization of leaky gate dielectrics

Microelectronic Engineering - Special issue: Proceedings of the 13th biennial conference on insulating films on semiconductors

Integration of organic insulator and self-assembled gold nanoparticles on Si MOSFET for novel non-volatile memory cells

Microelectronic Engineering - Proceedings of the 29th international conference on micro and nano engineering

Ge-channel p-MOSFETs with ZrO2 gate dielectrics

Microelectronic Engineering - The proceedings of the 2nd international symposium on nano- and giga-challenges in microelectronics

Improvement of interfacial properties with interfacial layer in La2O3/Ge structure

Microelectronic Engineering

Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift

Proceedings of the 44th annual Design Automation Conference

Breakdown characteristics of nFETs in inversion with metal/HfO2 gate stacks

Microelectronic Engineering

Analysis of interface states and series resistance of MIS Schottky diodes using the current-voltage (I-V) characteristics

Microelectronic Engineering

Thermionic current losses due to quantum trapping in III-V superlattice solar cells

ICC'07 Proceedings of the 11th Conference on Proceedings of the 11th WSEAS International Conference on Circuits - Volume 11

I-V and C-V methods to extract Al/polysilicon Schottky diode parameters

MMACTE'05 Proceedings of the 7th WSEAS International Conference on Mathematical Methods and Computational Techniques In Electrical Engineering

Losses due to quantum size effects in thermionic currents in III-V MQW solar cells

ICC'05 Proceedings of the 9th International Conference on Circuits

Gate voltage and geometry dependence of the series resistance and of the carrier mobility in FinFET devices

Microelectronic Engineering

Net negative charge in low-temperature SiO2 gate dielectric layers

Microelectronic Engineering

ZnO as a dielectric for organic thin film transistor-based non-volatile memory

Microelectronic Engineering

Effect of rapid thermal annealing on deep level defects in the Si-doped GaN

Microelectronic Engineering

Cubic GaN/AlGaN Schottky-barrier devices on 3C-SiC substrates

Microelectronic Engineering

Effects of rapid thermal annealing on nitrided gate oxide grown on 4H-SiC

Microelectronic Engineering

Double-fin FETs based on standard CMOS approach

Microelectronic Engineering

Criticisms on and comparison of experimental channel backscattering extraction methods

Microelectronic Engineering

Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model

Journal of Computational Physics

III-V nMOSFETs - Some issues associated with roadmap worthiness (invited)

Microelectronic Engineering

Remote phonon and surface roughness limited universal electron mobility of In0.53Ga0.47As surface channel MOSFETs

Microelectronic Engineering

Effect of post-oxidation annealing on the electrical properties of anodic oxidized films in pure water

PATMOS'05 Proceedings of the 15th international conference on Integrated Circuit and System Design: power and Timing Modeling, Optimization and Simulation

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

Microelectronic Engineering

Underlying design advantages for GaN MOSFETs compared with GaN HFETs for power applications

Journal of Computational Electronics